WPB4002 no. a1769-1/5 features ? reverse recovery time t rr =115ns (typ) ? on-resistance r ds (on)=0.28 (typ) ? input capacitance ciss=2200pf (typ) ? 10v drive speci cations absolute maximum ratings at ta=25c parameter symbol conditions ratings unit drain-to-source voltage v dss 600 v gate-to-source voltage v gss 30 v drain current (dc) i d 23 a drain current (pulse) i dp pw 10 s, duty cycle 1% 80 a source-to-drain diode forward current (dc) i sd 23 a source-to-drain diode forward current (pulse) i sdp pw 10 s, duty cycle 1% 80 a allowable power dissipation p d 2.5 w tc=25 c 220 w channel temperature tch 150 c storage temperature tstg --55 to +150 c avalanche energy (single pulse) *1 e as 172 mj avalanche current *2 i av 17 a note : * 1 v dd =99v, l=1mh, i av =17a (fig.1) * 2 l 1mh, single pulse package dimensions unit : mm (typ) 7503-004 60910qb tk im tc-00002373 sanyo semiconductors data sheet WPB4002 n-channel silicon mosfet general-purpose switching device applications http://semicon.sanyo.com/en/network ordering number : ena1769 product & package information ? package : to-3pb ? jeita, jedec : sc-65, to-247, sot199 ? minimum packing quantity : 100 pcs. / tray marking 14.0 15.6 4.8 2.0 20.0 20.0 3.5 2.6 1.2 1.3 15.0 3.2 1.4 1.6 1.0 0.6 5.45 5.45 123 0.6 2.0 1 : gate 2 : drain 3 : source sanyo : to-3pb pb4002 lot no.
WPB4002 no. a1769-2/5 electrical characteristics at ta=25c parameter symbol conditions ratings unit min typ max drain-to-source breakdown voltage v (br)dss i d =10ma, v gs =0v 600 v zero-gate voltage drain current i dss v ds = 480 v, v gs =0v 100 fig.1 avalanche resistance test circuit fig.2 switching time test circuit fig.3 t rr reverse recovery resistance test circuit 50 g s d p. g r gs =50 g s d i d =11.5a r l =17.3 g s d
WPB4002 no. a1769-3/5 drain-to-source voltage, v ds -- v drain current, i d -- a gate-to-source voltage, v gs -- v drain current, i d -- a static drain-to-source on-state resistance, r ds (on) -- static drain-to-source on-state resistance, r ds (on) -- case temperature, tc -- c drain current, i d -- a diode forward voltage, v sd -- v source current, i s -- a gate-to-source voltage, v gs -- v i d -- v ds i d -- v gs r ds (on) -- tc r ds (on) -- v gs i s -- v sd | y fs | -- i d forward transfer admittance, | y fs | -- s drain current, i d -- a switching time, sw time -- ns drain-to-source voltage, v ds -- v ciss, coss, crss -- pf ciss, coss, crss -- v ds it15682 it15683 it15684 it15685 --50 --25 0 25 50 75 100 125 150 0 0 60 50 30 40 10 30 525 20 15 20 10 0 70 60 50 30 20 40 10 016 412 210 68 14 15v 10v 0 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 tc=25 c v ds =20v v gs =5v it15687 0 0.2 0.4 0.6 0.8 1.4 1.2 1.0 0.01 0.1 10 7 5 5 3 2 7 3 2 7 5 3 2 2 1.0 7 5 3 it15686 25 c --25 c tc=75 c 0.1 1.0 23 57 23 57 10 23 7 5 10 1.0 2 5 7 3 5 7 3 2 5 3 v ds =10v tc= --25 c 75 c v gs =0v tc= --25 c 25 c 75 c 35 0 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 15 13 9 711 i d =11.5a tc=75 c 25 c --25 c v gs =10v, i d =11.5a 6v 25 c 8v it15688 100 1000 3 2 2 2 5 7 3 7 5 0.1 1.0 10 23 57 2 3 2 35 57 v dd =200v v gs =10v t d (off) t r t f t d (on) 0 100 1000 5 7 10000 7 5 3 2 7 5 3 2 50 10 30 40 20 it15689 f=1mhz ciss coss crss sw time -- i d
WPB4002 no. a1769-4/5 total gate charge, qg -- nc gate-to-source voltage, v gs -- v v gs -- qg a s o p d -- tc drain-to-source voltage, v ds -- v drain current, i d -- a case temperature, tc -- c allowable power dissipation, p d -- w 0 0 25 50 75 100 125 150 100 80 60 20 40 120 175 e as -- ta avalanche energy derating factor -- % ambient temperature, ta -- c p d -- ta ambient temperature, ta -- c allowable power dissipation, p d -- w it10478 0 0 20 40 60 80 100 120 3.0 2.5 140 160 2.0 1.5 1.0 0.5 it155692 it15691 0.1 2 1.0 3 5 7 2 0.1 10 s 100ms 10ms 1ms dc operation 1.0 10 100 1000 23 57 23 57 7 23 5 23 57 100 3 5 7 2 operation in this area is limited by r ds (on). i dp =80a (pw 10 s) 2 10 3 5 7 it15693 0 0 20 40 60 80 100 140 120 50 250 200 220 150 100 160 it15690 0 0 1 2 3 4 5 6 7 8 90 10 9 40 80 20 60 30 70 10 50 v ds =200v i d =23a 100 s i d =23a tc=25 c single pulse
WPB4002 no. a1769-5/5 ps this catalog provides information as of june, 2010. speci cations and information herein are subject to change without notice. note on usage : since the WPB4002 is a mosfet product, please avoid using this device in the vicinity of highly charged objects. any and all sanyo semiconductor co.,ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, av equipment, communication device, office equipment, industrial equipment etc.). the products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. if you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. if there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer ' s products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer ' s products or equipment. sanyo semiconductor co.,ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein. sanyo semiconductor co.,ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. it is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all sanyo semiconductor co.,ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of sanyo semiconductor co.,ltd. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo semiconductor co.,ltd. product that you intend to use. information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of sanyo semiconductor co.,ltd. or any third party. sanyo semiconductor co.,ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above.
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